发明名称 CLEANING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a cleaning method capable of cleaning off a film to be removed which is made of a metal oxide film or metal silicate film sticking on the surface of an object to be washed which is made of aluminum or aluminum alloy without giving large damage such as corrosion to the object to be washed. SOLUTION: For the cleaning method of washing away the film to be removed which is made of the metal oxide film sticking on the surface of an object to be washed which is made of at least one material selected from a group of aluminum, aluminum alloy, and nickel alloy; a cleaning solution is used which contains at least ammonium fluoride, hydrofluoric acid, and ethylene glycol or consists of an ammonium acetic acid solution. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005167087(A) 申请公布日期 2005.06.23
申请号 JP20030406307 申请日期 2003.12.04
申请人 TOKYO ELECTRON LTD 发明人 TAKAHASHI TAKESHI
分类号 B08B3/08;C23F1/30;H01L21/304;H01L21/3065;H01L21/31;H01L21/3213;(IPC1-7):H01L21/31;H01L21/306 主分类号 B08B3/08
代理机构 代理人
主权项
地址