发明名称 |
Method for exposing a substrate, patterning device, and lithographic apparatus |
摘要 |
A method using a lithographic apparatus comprising a reflective integrator is claimed that optimizes the exposure of features on a target area of a substrate, when the features make an angle between 5 and 85 degrees with respect to the target area. The method comprises rotating the reflective integrator with respect to the target area providing a rotated mirror-symmetric pupil shape, which is implemented by either rotating the substrate or rotating the reflective integrator with respect to the machine or the patterning device. The patterning device comprises a maximum usable area and a patterned area which are rotated with respect to each other if a rotated substrate is employed. The method can be used in single exposure or double exposure mode. A further advantage of the method of using a rotated wafer is that it can be used for exposing features on a substrate in any direction even when the projection system of the lithographic apparatus shows a preferred polarization direction.
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申请公布号 |
US2005134820(A1) |
申请公布日期 |
2005.06.23 |
申请号 |
US20030740830 |
申请日期 |
2003.12.22 |
申请人 |
ASML NETHERLANDS B.V. |
发明人 |
MULDER HEINE M.;VAN DIJSSELDONK ANTONIUS JOHANNES J.;LOOPSTRA ERIK R.;MICKAN UWE;MULKENS JOHANNES CATHARINUS H.;VOORMA HARM-JAN |
分类号 |
G03B27/54;G03F7/20;(IPC1-7):G03B27/54 |
主分类号 |
G03B27/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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