A MEMORY DEVICE, AN INFORMATION STORAGE PROCESS, A PROCESS, AND A STRUCTURED MATERIAL

摘要

A memory device, including a plurality of nanoscale memory cells (1510, 1512 ) created by applying pressure to and removing pressure from one or more regio ns (1510, 1512) of a substance (1502) to change the electrical conductivity of those regions (1510, 1512). An electrically conductive read probe (1514) determines the conductivities of the regions and thereby the information stored in the cells. A write probe (1508) applies pressure to and removes pressure from selected cells to change the electrical conductivity of those cells and thereby store or erase information.