| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film having high electric characteristics at a low temperature by a CVD method. SOLUTION: After manufacturing a thin film by the thin film manufacturing method based on the CVD method for forming a film on a substrate heated to the decomposition temperature or more of raw material gas by using film formation gas consisting of the raw material gas and reaction gas, crystallization annealing processing is performed at a temperature lower than the film formation temperature of the thin film. As a thin film before the annealing processing, film formation gas in which the quantity of raw material gas having the highest decomposition temperature out of the raw material gas components is set to the same quantity or more of a succeeding process is introduced to form an initial layer, and then film formation gas in which the quantity of raw material gas having the highest decomposition temperature is set to the same quantity or less as that of the initial layer is introduced to form a 2nd layer and after. COPYRIGHT: (C)2005,JPO&NCIPI
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