Saturable semiconductor laser absorber has one or more doped quantum trenches with retaining barriers

摘要

Saturable semiconductor absorber operates in conjunction with a laser mirror as a single combined unit. The unit is based on III/V-semiconductor material e.g. gallium arsenide or indium phosphide, and has one or more quantum trenches with retaining barriers on both sides. The quantum trenches and/or barriers are dosed at above 1 x 10 18>cm -3>with shallow donors and/or shallow acceptors.