| 摘要 |
PROBLEM TO BE SOLVED: To obviate an increase in series resistance caused by a long PFET extension in a CMOS. SOLUTION: Gate conductors 112 are formed above channel regions provided in the substrate 110, sidewall spacers 134 are formed adjacent to the gate conductors 112, and source and drain extensions are formed in the substrate. The sidewall spacers in the PFETs are larger (i.e., extend further from the gate conductors) than the sidewall spacers in the NFETs. COPYRIGHT: (C)2005,JPO&NCIPI
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