| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which drop of an operation speed can be prevented, and to provide a manufacturing method of the device. SOLUTION: The method has a process for forming a gate insulating film 12 on a semiconductor substrate 11; a process for forming a semiconductor film 13 including silicon on the gate insulating film; a process for forming a film 14 including first high melting metal and nitrogen on the semiconductor film; a process for heating semiconductor film and the film including the first high melting metal and nitrogen, and forming a film 15 including the first high melting metal, silicon and nitrogen in a boundary region of the semiconductor film and the film including the first high melting metal and nitrogen; a process for removing the film including the first high melting metal and nitrogen, and exposing the film including the first high melting metal, silicon and nitrogen; and a process for forming a metal film including a second high melting metal on the exposed film including the first high melting metal, silicon and nitrogen. COPYRIGHT: (C)2005,JPO&NCIPI
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