发明名称 SURFACE TREATMENT FOR MULTI-LAYER WAFERS FORMED FROM LAYERS OF MATERIALS CHOSEN FROM AMONG SEMICONDUCTING MATERIALS
摘要 <p>This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.</p>
申请公布号 WO2005057639(A1) 申请公布日期 2005.06.23
申请号 WO2004IB04326 申请日期 2004.12.10
申请人 S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES;COMMISSARIAT A L'ENERGIE ATOMIQUE;RAYSSAC, OLIVIER;BLONDEAU, BERYL;MORICEAU, HUBERT;LAGAHE-BLANCHARD, CHRYSTELLE;FOURNEL, FRANCK 发明人 RAYSSAC, OLIVIER;BLONDEAU, BERYL;MORICEAU, HUBERT;LAGAHE-BLANCHARD, CHRYSTELLE;FOURNEL, FRANCK
分类号 H01L21/20;H01L21/762;(IPC1-7):H01L21/20 主分类号 H01L21/20
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