| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which is installed in a processing chamber whose processing gas introduction portion for introducing an excited processing gas is heated, and can suppress or prevent the generation of particles from the processing gas introduction portion. SOLUTION: This substrate processing apparatus comprises a reaction pipe 203, a plasma generator 302 for exciting NH<SB>3</SB>gas, an NH<SB>3</SB>gas nozzle 301 installed within the reaction pipe 302 for introducing the plasma excited NH<SB>3</SB>gas into the reaction pipe 203, and a heating means installed outside the reaction pipe 302. The apparatus heats the interior of the reaction pipe 203 to process a wafer 200. NF<SB>3</SB>gas is introduced into the NH<SB>3</SB>gas nozzle 301 to remove the film deposited at least on the NH<SB>3</SB>gas nozzle 301. COPYRIGHT: (C)2005,JPO&NCIPI
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