发明名称 Method for manufacturing metal structure having different heights
摘要 Disclosed is a method for forming a plurality of metal structures having different heights on a semiconductor substrate. The disclosed method for manufacturing a metal structure having different heights includes: forming a plurality of seed layers, to have heights corresponding to the metal structure to be formed, on a semiconductor substrate so that those layers can be electrically separated, performing a plating process using a plating mold, and applying different currents to the respective seed layers so that the plating thickness can be adjusted for each of the seed layers. Accordingly, a plurality of metal structures having different heights can be obtained by a plating mold forming process and a plating process that are performed just once, respectively.
申请公布号 US2005136636(A1) 申请公布日期 2005.06.23
申请号 US20040012312 申请日期 2004.12.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIM DONG-SIK;JUN CHAN-BONG;CHOI HYUNG;SONG HOON
分类号 H01L21/288;C25D7/12;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/44 主分类号 H01L21/288
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