发明名称 Memory integrated circuit device having self reset circuit for precharging data buses based on the detection of their discharge levels
摘要 The invention provides a semiconductor integrated circuit device having a signal transmission path realizing high speed and low power consumption with a simple configuration. The device has a signal transmission path for transmitting a signal by discharging one of first signal lines corresponding to complementary input signals in a plurality of first signal lines precharged by a precharge circuit, and a self reset circuit for detecting the discharge level of the pair of signal lines corresponding to the complementary signals out of the plurality of first signal lines and operating the precharge circuit at a timing later than the period of discharging.
申请公布号 US6909653(B2) 申请公布日期 2005.06.21
申请号 US20030452273 申请日期 2003.06.03
申请人 HITACHI ULSI SYSTEMS CO., LTD. 发明人 SHIMADU DAISUKE;TOYOSHIMA HIROSHI;NISHIYAMA MASAHIKO
分类号 G11C11/41;G11C5/14;G11C7/10;G11C11/413;G11C11/417;G11C29/02;G11C29/04;(IPC1-7):G11C7/00 主分类号 G11C11/41
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