| 摘要 |
In the semiconductor storage device, a dummy P+ diffusion region which does not contribute to a storage operation is formed in the vicinity of two P+ diffusion regions constituting a storage node. Moreover, a dummy N+ diffusion region which does not contribute to the storage operation is formed in the vicinity of N+ diffusion regions FL 210 and FL 220 constituting a storage node. Consequently, a part of electrons generated in a P well region PW by irradiation of alpha rays or neutron rays can be collected into the dummy N+ diffusion region FL 250 , and a part of holes generated in an N well region NW by the irradiation of the alpha rays or the neutron rays can be collected into the dummy P+ diffusion region FL 150.
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