| 发明名称 |
Method and removing resist pattern |
| 摘要 |
A method for removing a resist pattern having a resist pattern forming step of forming a resist pattern on a substrate using a chemically amplified positive resist composition and a removing step of removing the resist pattern from the substrate using a solvent, a composition prepared by dissolving (A) an alkali soluble resin having a hydroxyl group in the side chain, (B) a photo acid generator and (C) a compound represented by the following general formula (I): <?in-line-formulae description="In-line Formulae" end="lead"?>H<SUB>2</SUB>C-CH-O-R<SUP>1</SUP>O-CH-CH<SUB>2</SUB> (I) <?in-line-formulae description="In-line Formulae" end="tail"?> wherein R<SUP>1 </SUP>represents an alkylene group having 1 to 10 carbon atoms or the like, in an organic solvent being used as the chemically amplified positive resist composition, the method further having a heat treatment step of heat-treating the substrate on which the resist pattern is formed at a temperature of 150 to 400° C. between the resist pattern forming step and the removing step.
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| 申请公布号 |
US2005130055(A1) |
申请公布日期 |
2005.06.16 |
| 申请号 |
US20040007037 |
申请日期 |
2004.12.08 |
| 申请人 |
OHNISHI HIROYUKI;NAKAYAMA KAZUHIKO;TAKAGI ISAMU |
发明人 |
OHNISHI HIROYUKI;NAKAYAMA KAZUHIKO;TAKAGI ISAMU |
| 分类号 |
G03F7/004;G03C5/16;G03F7/039;G03F7/26;G03F7/40;G03F7/42;H01L21/027;(IPC1-7):G03C5/16 |
主分类号 |
G03F7/004 |
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