| 摘要 |
A plasma processing method utilizing an apparatus comprising a processing chamber to which is connected an exhaust pump for decompressing the chamber, a gas feeding apparatus for feeding gas into the processing chamber, an object to be processed, a wafer electrode for mounting the object, an antenna electrode for generating plasma and opposed to the plate electrode, a plasma generating high frequency power supply connected to the antenna electrode, a first high frequency power supply connected to the wafer electrode, and a second high frequency power supply connected to the antenna electrode. The method includes setting the high frequencies applied from the first high frequency power supply and the second high frequency power supply to be equal and controlling the phase of the respective high frequencies.
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