| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a diode-connected transistor. SOLUTION: A manufacturing method of a diode-connected transistor includes: a stage of forming a silicon layer on a substrate; a stage of forming a first insulating layer on the silicon layer; a stage of forming a gate electrode 100 on the first insulating layer; a stage of forming a source region 210, a channel region, and a drain region 310 in the silicon layer; a stage of forming a second insulating layer on the gate electrode 100; a stage of forming a source electrode 220 and a drain electrode 320 on the second insulating layer, in such a manner that they are coupled (connected) with the source region 210 and the drain region 310, respectively; and a stage of connecting the drain electrode 320 and the gate electrode 100 through a contact hole. The contact hole is formed on a perpendicular cross section that is substantially same as that of the channel region. COPYRIGHT: (C)2005,JPO&NCIPI
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