发明名称 Transistor array and active-matrix substrate
摘要 A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of which is electrically conductive, an insulating layer that covers the core, and a semiconductor layer that covers the insulating layer. Each of the function lines contacts with, and crosses, the conductor lines. Each of the transistors includes a first ohmic contact region, which is defined by a region where one of the conductor lines crosses one of the function lines and which makes an ohmic contact with the semiconductor layer, a second ohmic contact region, which also makes an ohmic contact with the semiconductor layer, and a channel region, which is defined in the semiconductor layer between the first and second ohmic contact regions.
申请公布号 US2005127455(A1) 申请公布日期 2005.06.16
申请号 US20050042406 申请日期 2005.01.25
申请人 SHARP KABUSHIKI KAISHA 发明人 NISHIKI HIROHIKO;KOBAYASHI KAZUKI
分类号 G02F1/1368;H01L27/28;H01L27/32;(IPC1-7):H01L27/10;H01L29/94;H01L31/113;H01L21/38 主分类号 G02F1/1368
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