发明名称 Semiconductor component with complementary metal-oxide-semiconductor (CMOS) circuit, with bulk terminals, via which current is determined in blocking direction of bulk diodes between doped troughs and base
摘要 <p>CMOS circuit semiconductor body (1) comprises first conductivity doping, at least one trough (2), doped with second opposite conductivity and negative and positive MOS (NMOS, PMOS) transistors with terminals (S,D,G). There is electric terminal (9) on trough and electric terminal (10) on semiconductor body in region of base doping as well as circuit components which detect current or its increase between terminals in blocking direction, due to signs of conductivities, and trigger alarm or protection function.</p>
申请公布号 DE102004009622(A1) 申请公布日期 2005.06.16
申请号 DE20041009622 申请日期 2004.02.27
申请人 INFINEON TECHNOLOGIES AG 发明人 HOFREITER, PETER
分类号 H01L27/02;H01L27/092;H04L9/32;(IPC1-7):H01L23/58;H01L29/78;H01L31/112 主分类号 H01L27/02
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