ELECTROLESS COPPER PLATING LIQUID, AND ELECTROLESS COPPER PLATING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an electroless copper plating liquid which can fill a trench or a via hole of a semiconductor wafer having a≤120 nm fine wiring pattern without generating defects, and to provide an electroless copper plating method using the same. SOLUTION: In the electroless copper plating liquid, an additive having a reaction acceleration action such as potassium ferrocyanide and an additive having a reaction suppression action such as polyether are added at a weight ratio of 10:1 to 1:1000. The electroless copper plating method uses the electroless copper plating liquid. COPYRIGHT: (C)2005,JPO&NCIPI