发明名称 |
Method of preventing damage to porous low-k materials during resist stripping |
摘要 |
A method of forming a feature in a porous low-K dielectric layer is provided. A porous low-K dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the porous low-K dielectric layer. A feature is etched into the porous low-K dielectric layer. A protective layer is deposited over the feature after the etching the feature. The patterned photoresist mask is stripped, so that part of the protective layer is removed, where protective walls formed from the protective layer remain in the feature.
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申请公布号 |
US2005130435(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20030738280 |
申请日期 |
2003.12.16 |
申请人 |
ANNAPRAGADA RAO;TAKESHITA KENJI |
发明人 |
ANNAPRAGADA RAO;TAKESHITA KENJI |
分类号 |
H01L21/302;H01L21/311;H01L21/461;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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