| 摘要 |
PROBLEM TO BE SOLVED: To prevent an upper electrode constituting a ferroelectric capacitive element having a solid shape from being broken. SOLUTION: A semiconductor device is provided with a lower electrode 16 having a bending part in a cross section, a capacitance insulating film 17 consisting of ferroelectric formed along the upper face of the lower electrode 16, and an upper electrode 18 formed along an upper face of the capacitance insulating film 17. The capacitance insulating film 17 and the upper electrode 18 are formed by a chemical vapor deposition (CVD) method. COPYRIGHT: (C)2005,JPO&NCIPI
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