| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device capable of forming a low-resistance metallic semiconductor contact with an excellent reproducibility and excellent adhesive properties, by using a lift-off method proper to the formation of a fine pattern without an oxidation process and a heat treatment process; and to provide the semiconductor device manufactured by the manufacturing method. SOLUTION: The surface of the exposed section of a crystal 1 is removed by an etching in a trace quantity by an etchant after a patterning using a photolithographic technique after the formation of a resist film. Accordingly, an organic-substance thin-film remaining on the crystal 1 is removed by the etching together with a crystal surface. Consequently, a metallic film 4 can be formed on the extremely purified surface of the crystal 1, and the adhesive properties of the metallic film 4 can be ensured excellently. COPYRIGHT: (C)2005,JPO&NCIPI
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