| 发明名称 |
Field-effect semiconductor device and method for making the same |
| 摘要 |
A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula Al<SUB>x</SUB>In<SUB>y</SUB>Ga<SUB>1-x-y</SUB>N, wherein x+y=1, 0<=x<=1, and 0<=y<=1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.
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| 申请公布号 |
US2005127398(A1) |
申请公布日期 |
2005.06.16 |
| 申请号 |
US20050038255 |
申请日期 |
2005.01.21 |
| 申请人 |
SONY CORPORATION |
发明人 |
TANIGUCHI SATOSHI;SUZUKI TOSHIKAZU;ONO HIDEKI;ARASEKI JUN |
| 分类号 |
H01L21/28;H01L21/285;H01L21/302;H01L21/3065;H01L21/335;H01L21/338;H01L21/8234;H01L29/20;H01L29/423;H01L29/47;H01L29/778;H01L29/812;H01L29/872;H01L31/0328;H01L31/072;(IPC1-7):H01L21/338;H01L31/032;H01L21/823 |
主分类号 |
H01L21/28 |
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