| 摘要 |
PROBLEM TO BE SOLVED: To provide a high precision, miniaturized semiconductor image pickup device capable of detecting bright and dark portions in sufficient contrast even if there is a large brightness distribution within a field of view. SOLUTION: Each pixel circuit 10 of the semiconductor image pickup device is provided with a photodetection element 20, and current mirror circuits 30a, 30b provided as current generation circuits. The photodetection element 20 generates at a node Na a photocurrent I0 corresponding to a quantity of received light. The current mirror circuit 30a passes currents I1, I2 corresponding to the photocurrent I0 to a node Nb and an output node No respectively. The current mirror circuit 30b is connected to generate a current I4 corresponding to a current I3 passing through the node Nb and also allow a differential current between the current I2 and the current I4 to flow through the output node No. Each pixel circuit 10 has its node Nb electrically connected by a resistance component 40, which implements an inter-pixel connect, to the node Nb of at least one of adjacent pixel circuits. An output current Io will be a current corresponding to a relative difference between the photocurrent I0 of the pixel circuit of interest and the current I3 corresponding to an average quantity of light received at adjacent pixels. COPYRIGHT: (C)2005,JPO&NCIPI
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