GROUP III NITRIDE CRYSTAL, ITS MANUFACTURING METHOD, AND MANUFACTURING DEVICE OF GROUP III NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride crystal having a large growth speed of a crystal and its manufacturing method and to provide a manufacturing device of the group III nitride crystal. SOLUTION: In the manufacturing method of the group III nitride crystal including a molten liquid forming step in which the molten liquid 1 containing at least a group III element and a catalyst material is formed around a seed crystal 2 and a crystal growth step in which the group III nitride crystal 4 is grown on the seed crystal 2 by supplying a nitrogen-containing material 3 to the molten liquid 1 in a reaction vessel 21, temperature control is performed at the crystal growth step so that the temperature of the molten liquid 1 is lowered from the interface 13 of the nitrogen-containing material and the molten liquid toward the interface 12 of the seed crystal 2 and the molten liquid 1 or the interface 14 of the group III nitride crystal 4 grown on the seed crystal 2 and the molten liquid 1. COPYRIGHT: (C)2005,JPO&NCIPI