| 摘要 |
PROBLEM TO BE SOLVED: To provide an excellent manufacturing method of a diboride single crystal, wherein the entire grown crystal can be used as an epitaxial substrate material for GaN and its processing step can be simplified, and a crystal-growing rod for use therein. SOLUTION: The crystal-growing rod comprises a main body, which has a boron concentration higher than the stoichiometric composition of a diboride, and a melting zone-forming part, which is formed at the tip of the main body and has a boron concentration higher than that in other parts. In the manufacturing method of the diboride single crystal, the single crystal is grown by melting and cooling the melting zone-forming part of the crystal-growing rod. This enables the composition of the grown crystal to be substantially stably controlled throughout the initial and final phases of crystal growth, which reduces variation in composition, inhibits introduction of crystal interface and enables growing of the single crystal which is excellent in crystallinity. COPYRIGHT: (C)2005,JPO&NCIPI
|
