发明名称 METHOD OF FORMING BARRIER LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a barrier layer by which the barrier layer can be formed inexpensively with low energy by forming the barrier layer without using the sputtering method. SOLUTION: In the method of forming the barrier layer, the barrier layer is formed on the internal wall surface 71a of a contact hole 71 formed in an interlayer insulating layer 5 disposed on a conductive layer 3. The method includes a step of causing at least a barrier layer forming area to have a lyophilic property, a step of applying a liquid material X containing a barrier layer forming material to the surface of the insulating layer 5, and a step of forming the barrier layer by baking the applied liquid material X. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005158878(A) 申请公布日期 2005.06.16
申请号 JP20030392587 申请日期 2003.11.21
申请人 SEIKO EPSON CORP 发明人 TAKEDA MINA
分类号 H01L21/288;H01L21/768;(IPC1-7):H01L21/288 主分类号 H01L21/288
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