发明名称 METHOD FOR FORMING METAL PILLAR
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a metal pillar having a high aspect ratio on the surface of an IC pattern, a substrate or the like. <P>SOLUTION: Plasma is uniformly generated at the part along a gap of a comb teeth electrode and an oxygen gas is decomposed to generate an oxygen radical. The generated oxygen radical is introduced to a lower plasma processing room and discummed by the oxygen radical. More specifically, the existing scum is decomposed by the oxygen radical, and a side wall of an opening is roughened regardless of the existence of the scum and immersed in a plating solution. This fills a metal (a gold, copper, aluminum or the like) in the opening to obtain a metal pillar by removing the resist film by ashing. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005159194(A) 申请公布日期 2005.06.16
申请号 JP20030398412 申请日期 2003.11.28
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TAKAO KAZUHISA;NAKAMURA AKIHIKO
分类号 H05H1/46;C23C16/507;H01L21/28;H01L21/288;H01L21/3065;H01L21/3205;H01L21/60;H01L23/52 主分类号 H05H1/46
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