| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element low in threshold current, easy to manufacture, excellent in temperature property, and high in responding speed. SOLUTION: The semiconductor laser element comprises an n-type GaAs substrate 101, an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101, an undoped quantum well active layer 103, a p-type AlGaInP first cladding layer 104, a p-type GaInP etch stop layer 105, a p-type AlGaInP second cladding layer 106, a p-type GaInP cap layer 107, a p-type GaAs contact layer 108, and an n-type AlInP block layer 109. The semiconductor laser element has a ridge and protruding sections on both sides of the ridge, and the p-type GaAs contact layer 108 is formed only on the ridge top surface. COPYRIGHT: (C)2005,JPO&NCIPI
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