| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal oxide thin film formation method for improving the physical properties of an obtained thin film by decreasing deposition temperature, improving deposition rate at low temperature, and restraining the occurrence of particles. SOLUTION: The metal oxide thin film is formed by adding an organic compound containing an HCO group to a reaction system. The organic compounds are aldehydes and formates. The formates have a chemical expression: HCOOR (in the expression, OR indicates a chain or annular alkoxyl group having 1-7 carbons, and may contain a branch structure). Gas obtained by vaporizing an organic compound solution and gas obtained by vaporizing a metal compound solution, or gas obtained by vaporizing solution containing a metal compound and an organic compound are supplied to a deposition chamber. COPYRIGHT: (C)2005,JPO&NCIPI
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