发明名称 DEFECT OBSERVING METHOD AND APPARATUS OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and a method for quickly and accurately inspecting a minute foreign substance and a pattern defect generated during a manufacturing process in the device manufacturing process for forming a circuit pattern on a board of a semiconductor device. SOLUTION: A sample is illuminated in a plurality of directions with different incident angles in a dark view field. A scattered light from the sample illuminated in the dark view field is detected in a plurality of the directions. Noise other than the pattern is reduced by processing signals detected and obtained in a plurality of the directions. The defect existing on a surface of an optical transparent film of the sample and the defect existing in an interior or at a bottom of the optical transparent film are identified. The defect identified as a defect existing on the surface of the optical transparent film of the sample, is observed by an electron microscope. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005156537(A) 申请公布日期 2005.06.16
申请号 JP20040274334 申请日期 2004.09.22
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 UTO YUKIO;NOGUCHI MINORU;OSHIMA YOSHIMASA;KUROSAKI TOSHISHIGE
分类号 G01B11/00;G01N21/956;G01N23/225;H01L21/66;(IPC1-7):G01N21/956 主分类号 G01B11/00
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