| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory apparatus in which refresh operation of a second time is performed for a memory cell existing in the same memory sub-array which is different from a memory cell refreshed by refresh operation of a first time. SOLUTION: This apparatus is provided with a pair of memory sub-array, and a control signal generating circuit outputting first and second refresh start signals in order within an operation time of an external refresh command responding to an internal refresh command. The memory sub-array has a plurality of memory cells sharing a sense amplifier and connected to each bit line and word line and arranged in a matrix type. Responding to the first refresh start signal, the first refresh operation is performed for a memory cell group connected to one side of the first word line out of the memory sub-array, responding to the second refresh start signal, the second refresh operation is performed for a memory cell group connected to the second word line being different from one side of the first word line. COPYRIGHT: (C)2005,JPO&NCIPI
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