DUAL-GATE FIELD EFFECT TRANSISTOR

摘要

A dual-gate field effect transistor includes two gate insulation films (6-1, 6-2) sandwiching a vertical channel (5) standing on a substrate (1) and arranged between a source (7-1) and a drain (7-2), from a direction orthogonal to the carrier running direction of the vertical channel; and two gate electrodes (3-1, 3-2) respectively facing the vertical channel (5) via the gate insulation films (6-1, 6-2). The gate insulation films (6-1, 6-2) have different thickness values t1,t2. It is also possible that the gate insulation films (6-1, 6-2) have different dielectric constants ϵ1, ϵ2, or the gate electrodes (3-1, 3-2) have different work functions Phi1, Phi2. Thus, it is possible to set the threshold value voltage of the dual-gate field effect transistor to a desired value when manufacturing the transistor. Furthermore, it is possible to prevent the problem of increase of the sub-threshold coefficient which occurs in the conventional technique.