发明名称 Apparatus and method of analyzing magnetic random access memory
摘要 An analysis apparatus of MRAM and analysis method thereof are provided. The analysis apparatus includes: an MRAM mounting unit on which an MRAM is mounted; a magnetic-field applying unit which is positioned around the MRAM mounting unit and applies an external magnetic field to the MRAM mounted on the MRAM mounting unit; a probe card which is located in a position corresponding to the MRAM mounting unit; a matrix switch unit which designates a unit cell of the MRAM; a source measurement unit which applies an internal magnetic field to the unit cell of the MRAM or measures a resistance of the unit cell of the MRAM; and a computer unit which stores and analyzes data regarding the measured resistance of the each unit cell of the MRAM. The analysis apparatus and method can analyze characteristics of the unit cells with a relatively simple structure and at a fast speed.
申请公布号 EP1542236(A2) 申请公布日期 2005.06.15
申请号 EP20040257268 申请日期 2004.11.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, WAN-JUN;HWANG, IN-JUN;KIM, TAE-WAN
分类号 G01N27/72;G11C11/16;G01N27/00;G01N27/04;G11C11/15;G11C29/00;G11C29/44;G11C29/50;G11C29/56;H01L21/8246;H01L27/105;H01L43/08;H01L43/12;(IPC1-7):G11C11/16 主分类号 G01N27/72
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