发明名称 |
METHOD OF PRODUCING SILICON MONOCRYSTAL |
摘要 |
A silicon single crystal rod (24) is pulled from a silicon melt (13) molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal rod and a temperature of the heater, thereby controlling a diameter of the silicon single crystal rod. A PID control in which a PID constant is changed on a plurality of stages is applied to a method which controls the pulling speed of the silicon single crystal rod so that the silicon single crystal rod has a target diameter and a method which controls a heater temperature so that the silicon single crystal rod has the target temperature. <??>A set pulling speed for the silicon single crystal rod is set so that V/G becomes constant, and an actual pulling speed is accurately controlled so as to match with the set pulling speed, thereby suppressing a fluctuation in diameter of the single crystal rod. <IMAGE>
|
申请公布号 |
EP1541721(A1) |
申请公布日期 |
2005.06.15 |
申请号 |
EP20030741226 |
申请日期 |
2003.07.07 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORPORATION |
发明人 |
WAKABAYASHI, D.;SAITO, M.;SATO, S.;FURUKAWA, J.;KITAMURA, K. |
分类号 |
C30B15/00;C30B15/22;C30B29/06;(IPC1-7):C30B29/06;C30B15/26;H01L21/208 |
主分类号 |
C30B15/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|