发明名称 |
Multiple exposure method for forming a patterned photoresist layer |
摘要 |
A method for exposing a blanket photoresist layer employs: (1) a first direct write exposure of the blanket photoresist layer to form therein an exposed peripheral sub-region of a desired exposed pattern; and (2) a second masked photoexposure of the blanket photoresist layer to form therein a masked photoexposed bulk sub-region of the desired exposed pattern which overlaps but does not extend beyond the exposed peripheral sub-region. The once masked photoexposed once direct write exposed blanket photoresist layer may be developed to form a patterned photoresist layer employed for forming a patterned opaque layer border within an opaque bordered attenuated phase shift mask.
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申请公布号 |
US6905802(B2) |
申请公布日期 |
2005.06.14 |
申请号 |
US20030637862 |
申请日期 |
2003.08.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN CHENG-MING |
分类号 |
G03C5/00;G03F1/00;G03F7/00;G03F7/20;G03F9/00;(IPC1-7):G03F9/00 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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