发明名称 |
Method to fabricate high-performance NPN transistors in a BiCMOS process |
摘要 |
A method of forming a quasi-self-aligned heterojunction bipolar transistor (HBT) that exhibits high-performance is provided. The method includes the use of a patterned emitter landing pad stack which serves to improve the alignment for the emitter-opening lithography and as an etch stop layer for the emitter opening etch. The present invention also provides an HBT that includes a raised extrinsic base having monocrystalline regions located beneath the emitter landing pad stack.
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申请公布号 |
US6906401(B2) |
申请公布日期 |
2005.06.14 |
申请号 |
US20040856503 |
申请日期 |
2004.05.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DUNN JAMES S.;FEILCHENFELD NATALIE B.;LIU QIZHI;STRICKER ANDREAS D. |
分类号 |
H01L21/331;H01L21/8249;H01L29/737;(IPC1-7):H01L29/72 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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