| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device being capable of easily forming a re-wiring having a required shape and a required size and having an excellent productivity and a high performance. <P>SOLUTION: The semiconductor device is composed of a plurality of first bonding pads 2, a passivation film 3 protecting a circuit forming surface 1, a first insulating film 4 formed on the film 3, and a stress relaxation layer 5 formed on the first insulating film 4. The semiconductor device is further composed of the re-wiring 6 in which one end is connected to the first bonding pad 2 and second bonding pad 8 formed at the other end is arranged on the layer 5, a second insulating film 7 protecting the re-wiring 6, and bump electrodes 9 set to the second bonding pads 8. The outer-peripheral wall surface 5a of the layer 5 is formed in an inclined plane of approximately 5 to 30°, and the directions of the routing of all the re-wiring 6 on the wall surface 5a are set in the vertical or inclined directions to the direction of the upper edge or lower edge of the wall surface 5a. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
