发明名称 |
Crossed power strapped layout for full CMOS circuit design |
摘要 |
An integrated circuit device and method thereof includes a substrate and a plurality of microelectronic devices. Each of the microelectronics devices includes a patterned feature located over the substrate, wherein the pattern feature comprises at least one electrical contact. The integrated circuit also includes a plurality of interconnect layers for distributing electrical power to the plurality of microelectronic devices. The interconnect layers include a plurality of conductive members associated with each interconnect layer, wherein the members of at least one subsequent interconnect layer straddle members of at least one adjacent interconnect layer. The integrated circuit device further includes a plurality of bond pads connected to at least one of the plurality of members of the interconnect layers.
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申请公布号 |
US2005121793(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20040002536 |
申请日期 |
2004.12.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIAW JHON J. |
分类号 |
H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L21/8244;H01L23/50;H01L23/52;H01L23/528;H01L27/04;H01L27/06;H01L27/10;H01L27/11;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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