| 摘要 |
PROBLEM TO BE SOLVED: To provide an impurity diffusion device which enables a uniform impurity diffusion layer to be formed in a semiconductor wafer by a simple method without involving the deterioration of productivity and a great increase of an installation cost. SOLUTION: The device has an exhaust port side gas shielding plate 4 with a cut-out portion 4a in an outer circumferential end part arranged almost vertically to a longitudinal direction of a process tube 1 between a gas exhaust port 1b and a semiconductor wafer 2, and an introduction port side gas shielding plate 5 with a cut-out portion 5a in an outer circumferential end part arranged almost vertically to a longitudinal direction of the process tube 1 between a gas introduction port 1a and the semiconductor wafer 2. A downstream side resistance current plate 6 (first resistance current plate) and an upstream side resistance current plate 7 (second resistance current plate) are provided between a boat 3 whereon the semiconductor wafer 2 is mounted and an inner wall of the process tube 1, and both thereof have a plate-like shape with a plurality of holes, and are arranged in a longitudinal direction of the process tube 1 to hold the boat 3 from both sides. COPYRIGHT: (C)2005,JPO&NCIPI
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