发明名称 |
Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same |
摘要 |
The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20° C./cm in the temperature range of 1000 to 1100° C.
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申请公布号 |
US2005120944(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20040001888 |
申请日期 |
2004.12.01 |
申请人 |
HONG YOUNG H.;CHOI ILL S.;KIM SANG H.;KWAK MAN S.;LEE HONG W. |
发明人 |
HONG YOUNG H.;CHOI ILL S.;KIM SANG H.;KWAK MAN S.;LEE HONG W. |
分类号 |
C30B15/14;C30B15/20;C30B29/06;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B15/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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