| 发明名称 |
Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization |
| 摘要 |
A thin film semiconductor device includes a gate electrode insulator formed through high-heat oxidization of a semiconductor film. The high-heat oxidization of semiconductor film is carried out, in the process of crystallization or recrystallization of non-single-crystalline semiconductor thin film on a base layer, by irradiating predetermined areas of the thin film which is implanted with oxygen ion before irradiation, to convert such areas to oxidized areas, and these areas are processed to gate electrode insulators of electric circuit units in the thin film semiconductor device. |
| 申请公布号 |
US2005121111(A1) |
申请公布日期 |
2005.06.09 |
| 申请号 |
US20050031144 |
申请日期 |
2005.01.06 |
| 申请人 |
OANA YASUHISA;MATSUMURA MASAKIYO |
发明人 |
OANA YASUHISA;MATSUMURA MASAKIYO |
| 分类号 |
H01L21/20;H01L21/321;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L29/12;H01L21/00;H01L21/84 |
主分类号 |
H01L21/20 |
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