| 摘要 |
A new Insulated-Gate Field-Effect Thin Film Transistor (Gated-FET) is disclosed. A semiconductor thin film Gated-FET device, comprising: a lightly doped resistive channel region formed on a semiconductor thin film layer, the thickness of the channel comprising the entire thin film thickness; and an insulator layer deposited on said channel surface with a gate region formed on a gate material deposited on said insulator layer, said gate region receiving a gate voltage comprised of: a first level that modulate said channel resistance to a substantially non-conductive state by fully depleting majority carriers from said thin film layer in the channel region; and a second level that modulate said channel resistance to a substantially conductive state by at least partially accumulating majority carriers near the gate surface of the thin film layer in said channel region.
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