| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce read errors of stored-value caused by the variation of characteristics of a memory transistor in a semiconductor memory. <P>SOLUTION: A sense amplifier, which can set a reference current Iref to be supplied to a bit line in accordance with the varied characteristics of the memory transistor, is used in the semiconductor memory. The sense amplifier is provided with; a pMOS transistor 511 in which a source is connected to a power source line VDD, and a drain and a gate are connected to each other; a resistor 514 whose one end is connected to the drain of the pMOS transistor 511 and whose other end is connected to a ground line GND; pMOS transistors 512-1 to 512-3 in which the sources are connected to the power source line VDD and the gates are connected to the drain of the pMOS transistor 511; and trimming resistors 515-1 to 515-3 which individually control "On/Off" of the corresponding pMOS transistors 512-1 to 512-3. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
