| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which is capable of manufacturing a stabilized thin film transistor with high characteristics, since a crystalline semiconductor film formed by utilizing a lateral growth method employing a capping method is constituted of a crystal excellent in crystallinity. SOLUTION: The manufacturing method of semiconductor device is provided with a substrate and the crystalline semiconductor film laminated directly or indirectly on the substrate. The method comprises a process for laminating an amorphous semiconductor film directly or indirectly on the substrate, a process for laminating a first cap film and a second cap film which are in a specialized positional relation mutually on the surface of the amorphous semiconductor film, a process for melting a part of the amorphous semiconductor film in solid state into liquid state by irradiating laser light on the cap films, and a process for crystallizing the liquid state semiconductor to change the same into the crystalline semiconductor film. COPYRIGHT: (C)2005,JPO&NCIPI
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