发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
Disclosed is a semiconductor device comprising an underlying insulating film having a depression, a semiconductor structure which includes a first semiconductor portion having a portion formed on the underlying insulating film and a first overlap portion which overlaps the depression, a second semiconductor portion having a portion formed on the underlying insulating film and a second overlap portion which overlaps the depression, and a third semiconductor portion disposed between the first and second semiconductor portions and having a portion disposed above the depression, wherein overlap width of the first overlap portion and overlap width of the second overlap portion are equal to each other, a gate electrode including a first electrode portion covering upper and side surfaces of the third semiconductor portion and a second electrode portion formed in the depression, and a gate insulating film interposed between the semiconductor structure and the gate electrode.
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申请公布号 |
US2005121703(A1) |
申请公布日期 |
2005.06.09 |
申请号 |
US20040874732 |
申请日期 |
2004.06.24 |
申请人 |
HIEDA KATSUHIKO;MATSUZAWA KAZUYA;HAGISHIMA DAISUKE |
发明人 |
HIEDA KATSUHIKO;MATSUZAWA KAZUYA;HAGISHIMA DAISUKE |
分类号 |
H01L29/423;H01L21/336;H01L21/8242;H01L27/108;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L21/336;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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