| 摘要 |
PROBLEM TO BE SOLVED: To solve the conventional problems wherein characteristics cannot be improved; because there is much dispersion of impurity concentrations in the base region and the emitter region, man-hour cannot be shortened because a phosphorus processing process is required and cost reduction and man-hour simplification cannot be attained, because the deposition of a metallic layer containing Sb is required in order to improve the ohmic properties of a collector electrode. SOLUTION: In a base area forming process, an NSG film is formed, instead of an oxide film and then diffusion, is performed. Consequently, the dispersion of impurity concentrations in the base region can be suppressed. In an emitter region forming process, the dispersion of impurity concentrations in the emitter region can be suppressed by controlling temperature in a diffusion furnace from the carrying-in of a substrate up to its carrying out. By adopting a high-concentration substrate, low V<SB>CE(sat)</SB>can be realized, and the deposition of a metal layer containing impurities on a rear electrode can be omitted. COPYRIGHT: (C)2005,JPO&NCIPI
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