| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which the reliability, manufacturing yield, etc., of a semiconductor device can be improved by securing a short margin between a wiring pattern and a via pattern in the groove-first dual damascene method. SOLUTION: The method of manufacturing the semiconductor device includes a step of forming a lower film 3 on interlayer insulating films 1 and 2 formed on lower-layer wiring, a step of forming a wiring groove pattern 5 by etching the lower film 3 in a linear or striped state, and a step of forming an upper film 6 on the lower film 3 having the formed wiring groove pattern 5. The method also includes a step of forming a linear pattern 7 intersecting the wiring groove pattern 5 by etching the upper film 6 in a linear or striped state, and a step of forming openings 8 in the intersecting areas of the wiring groove pattern 5 and linear pattern 7 by etching the interlayer insulating films 1 and 2 by using the lower and upper films 3 and 5 as masks. COPYRIGHT: (C)2005,JPO&NCIPI
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