Blocking/barrier layer FET in silicon carbide to operate with a semiconductor function has doped semiconductor areas, a current path, a source structure, a drain structure and a gateway structure

摘要

A p-doped island area (3) separates a first n-doped semiconductor area (NDSA) (21) acting as a drift zone from a second NDSA (22). In the first NDSA, there is a vertical section for a current path (CP) formed between a source structure (5) and a drain structure (4). In the second NDSA area, the CP is directed in a horizontal section and controlled by a potential on a gateway structure (6). An independent claim is also included for a method for producing a blocking layer FET.