| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a metal wiring of a flat surface. SOLUTION: The method includes steps of forming a lower metal wiring 31 on a semiconductor substrate, depositing an insulating film 33 on the lower metal wiring 31, forming damascene etching patterns 35a, 35b on the insulating film 33, depositing a conductive material 38 on the insulating film 33 so that the damascene etching patterns may be filled, forming an etching preventive film 39 on a conductive layer 38 depositing a material which is higher in etching selectivity to the conductive material 38, removing a part of the etching preventive film 39 by chemical mechanical polishing by such time as the conductive layer 38 is exposed, removing a part of the conductive layer 38 by etching using the etching preventive film 39 as an etching mask, and forming a conductive interconnection with the damascene etching patterns filled, by removing remained etching preventive film 39 and the conductive layer 38 by the chemical mechanical polishing. COPYRIGHT: (C)2005,JPO&NCIPI
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