| 摘要 |
PROBLEM TO BE SOLVED: To effectively protect a thin film transistor from surges caused by ESD. SOLUTION: In a semiconductor integrated circuit, an internal circuit 12 is constituted of a high-withstand voltage circuit 13 and a low-withstand voltage circuit 15. An ordinary protective circuit for surge is directly connected to an external terminal of an IC on the outside of the internal circuit 12. The high-withstand voltage circuit 13 has a MOS transistor driven with a power-supply voltage VDD. The low-withstand voltage circuit 15 has a MOS transistor driven with a power-supply voltage Vdd lower than the voltage VDD. To the MOS transistor driven with the low-withstand voltage Vdd, protective circuits for surge are individually connected. Capacitors, diodes, etc., are used as the protective circuits. COPYRIGHT: (C)2005,JPO&NCIPI
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